STUDY OF P-N JUNCTION & ENERGY BAND GAP SK013
Exp-1 Determination of reverse saturation current.
Exp-2 Study of Energy Band Gap of p-n Junction.
Exp-3 Study of Junction capacitance.
- Suitable for Diodes, Transistors.
- Built - in current source, bias voltage generator.
- Built - in power supply for oven.
- Saturation current.
- Energy band gap.
- Temperature coefficient.
- Junction capacitance.
Principle and Working:
The slope of V-T curve used to measure the temperature coefficient of the junction voltage and the energy band gap is given by
Where V(T) - Voltage at given temperature, dV/dT - Slope of curve, for Si, m = 1.5, η=2 at 300K and for Ge, m = 2, η=1 at 300K, η - Material constant and q - charge of electron.
Contents:
| Cat. No. | Item Name | Qty. |
| SN170 | P-N junction setup | 1 |
| CK142 | Oven with temperature sensor | 1 |
| R4536 | Junction transistor | 1 |
| R0322 | Diode 1N5402 | 1 |
| R8087 | CRO probe | 1 |
* Additionally Required :
*CRO is an optional item, not supplied with the setup.